Title :
Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage
Author :
Fukano, H. ; Kozen, A. ; Kato, Kazuhiko ; Nakajima, O.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
12/5/1996 12:00:00 AM
Abstract :
The authors propose a novel edge-illuminated refraction-facet photodiode (RFPD), where the incident light parallel to the upside surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5 μm show a responsivity as high as 0.96 A/W even at a bias voltage of 0.5 V for a flat-ended singlemode fibre
Keywords :
integrated optics; photodiodes; 0.5 V; 1.5 mum; absorption layer thickness; angled facet; bias voltage; edge-illuminated refracting-facet photodiode; flat-ended singlemode fibre; high responsivity; low-operation voltage; planar lightwave circuit; thin absorption layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961590
