• DocumentCode
    1308414
  • Title

    Substrate engineering analysis of δ-doped Si0.8Ge 0.2 p-MOSFET transistors

  • Author

    Soon-Young Oh

  • Volume
    32
  • Issue
    25
  • fYear
    1996
  • fDate
    12/5/1996 12:00:00 AM
  • Firstpage
    2355
  • Lastpage
    2357
  • Abstract
    The effects of substrate engineering for δ-doped SiGe p-MOSFETs are analysed using a 3D device simulator, DAVINCI. The device uses the placement of an intrinsic buffer layer as well as an n+ control layer underneath the δ-doped layer in order to adjust the device characteristics. Results of the simulation showed that the devices have higher current driving capability compared to the conventional silicon p-MOSFETs. The electrical characteristics of the device were effectively controlled by varying the doping level and the thickness of either the buffer layer or the control layer
  • Keywords
    Ge-Si alloys; MOSFET; semiconductor device models; semiconductor doping; semiconductor materials; substrates; δ-doped Si0.8Ge0.2 p-MOSFET transistor; 3D device simulation; DAVINCI; Si0.8Ge0.2; buffer layer; control layer; current driving; electrical characteristics; substrate engineering;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961572
  • Filename
    555976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1308414