Title :
Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser
Author :
Boucaud, P. ; Julien, F.H. ; Prazeres, R. ; Ortega, J.-M. ; Berger, V. ; Nagle, J. ; Leburton, J.P.
Author_Institution :
Univ. Paris Sud, Orsay, France
fDate :
12/5/1996 12:00:00 AM
Abstract :
The authors have studied the intersubband relaxation in asymmetric GaAs/AlGaAs coupled quantum wells using a two-colour free electron laser. Three subbands are bound in the conduction band and exhibit two intersubband transitions in the mid-infrared E13 and E23 at 10 and 14.5 μm, respectively. To measure the intersubband relaxation time in the E3 subband, a time-resolved pump and probe experiment is performed in multipass waveguide geometry with the picosecond two-colour free electron laser facility CLIO in Orsay. At room temperature, the first colour is set at 10 μm and pumps the E 13 intersubband transition while the second colour (14.5 μm) probes the E23 intersubband transition. A relaxation time of ~0.5 ps on the third subband is measured. This value is in agreement with theoretical relaxation calculations which take into account interface and slab phonon modes
Keywords :
III-V semiconductors; carrier lifetime; carrier relaxation time; gallium arsenide; measurement by laser beam; semiconductor quantum wells; time resolved spectra; 10 micron; 14.5 micron; CLIO; GaAs-AlGaAs; asymmetric GaAs/AlGaAs coupled quantum well; conduction band; interface phonon mode; intersubband lifetime; intersubband relaxation time; mid-infrared transitions; multipass waveguide; picosecond two-colour free electron laser; slab phonon mode; time-resolved pump and probe measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961550