DocumentCode :
1308587
Title :
1220–1280-nm Optically Pumped InAs Quantum Dot-Based Vertical External-Cavity Surface-Emitting Laser
Author :
Albrecht, Alexander R. ; Stintz, Andreas ; Jaeckel, Felix T. ; Rotter, Thomas J. ; Ahirwar, Pankaj ; Patel, Victor J. ; Hains, Christopher P. ; Lester, Luke F. ; Malloy, Kevin J. ; Balakrishnan, Ganesh
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
Volume :
17
Issue :
6
fYear :
2011
Firstpage :
1787
Lastpage :
1793
Abstract :
We report an InAs quantum dot-based optically pumped vertical external-cavity surface-emitting laser (VECSEL), with a continuously variable emission wavelength from 1220 to 1280 nm through the use of epitaxial gradient across the wafer. We demonstrate the performance of two designs of this VECSEL. The first design, 4 × 3, makes use of a resonant periodic gain structure where three dot-in-a-well (DWELL) layers are located at the antinode of the E-field standing wave, with a total of four sets being used. The second design, 12 × 1, makes use of a single DWELL layer per antinode which is repeated 12 times for the same total of 12 DWELL layers. We demonstrate the lasing performance of the two structures as a function of distance from the center of the wafer and use known radial composition gradients in the molecular beam epitaxy reactor to achieve 50 nm continuous wavelength variation in the 4 × 3 structure and 60 nm in the 12 × 1 structure. We also demonstrate that the performance of the 12 × 1 structure is significantly improved compared to the 4 × 3 structure for all measured laser parameters, possibly due to increased pump absorption in the former structure´s thicker barriers.
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; molecular beam epitaxial growth; optical pumping; periodic structures; quantum dot lasers; surface emitting lasers; E-fleld standing wave; InAs; VECSEL designs; continuously variable emission wavelength; dot-in-a-well layers; epitaxial gradient; laser parameters; molecular beam epitaxy; optically pumped quantum dot laser; pump absorption; radial composition gradients; resonant periodic gain structure; vertical external-cavity surface-emitting laser; wavelength 1220 nm to 1280 nm; wavelength 50 nm; wavelength 60 nm; Heat sinks; Laser excitation; Molecular beam epitaxial growth; Power generation; Pump lasers; Vertical cavity surface emitting lasers; Quantum dot lasers; semiconductor lasers; surface-emitting lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2011.2144958
Filename :
6003734
Link To Document :
بازگشت