Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser

Author

Xiaodong Huang ; Stintz, A. ; Hains, C.P. ; Liu, G.T. ; Cheng, J. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

12

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

227

Lastpage

229

Abstract

Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm²) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 μm when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40/spl deg/C, with a characteristic temperature T₀ of 41 K near room temperature. Lasers with a 20 μm stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated)."

Keywords

Debye temperature; III-V semiconductors; current density; ground states; indium compounds; laser beams; laser cavity resonators; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.25 mum; 10 mW; 20 mum; 298 K; 32 percent; 4.2 mm; 40 C; 41 K; 5 m; CW lasing; DWELL structure; InAs; InAs quantum dot layer; InAs quantum-dot laser; InAs-InGaAs; InGaAs; cavity length; characteristic temperature; continuous-wave lasing operation; differential slope efficiency; dot-in-well structure; emission wavelength; facet; ground state; peak output power; ridge waveguide quantum-dot laser; room temperature; single-layer quantum-dot laser; strained InGaAs quantum well; stripe width; threshold current density; very low threshold current density room temperature continuous-wave lasing; Indium gallium arsenide; Land surface temperature; Power generation; Power lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Stationary state; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.826896

Filename

826896