Strongly index-guided II-VI laser diodes

Author

Legge, M. ; Bacher, G. ; Bader, S. ; Forchel, A. ; Lugauer, H.-J. ; Waag, Andreas ; Landwehr, G.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

12

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

236

Lastpage

238

Abstract

Ridge-waveguide laser diodes based on Be-chalcogenides have been fabricated by reactive ion etching and planarization with polyimide. Etching close to or even through the active layer is demonstrated to suppress the current spreading efficiently; resulting in a significant reduction of the threshold current as compared to gain-guided structures. This allows the fabrication of narrow, strongly index-guided II-VI laser diodes with a ratio between the vertical and the lateral far-field angle of, e.g., 1.2:1 for L/sub m/=1 μm.

Keywords

II-VI semiconductors; beryllium compounds; cadmium compounds; laser beams; magnesium compounds; molecular beam epitaxial growth; optical fabrication; ridge waveguides; semiconductor lasers; sputter etching; waveguide lasers; zinc compounds; Be-chalcogenides; CdZnSe-ZnBeSe-MgZnBeSe; active layer; current spread; fabrication; gain-guided structures; index-guided II-VI laser diodes; lateral far-field angle; molecular beam epitaxy; narrow strongly index-guided II-VI laser diodes; planarization; polyimide; reactive ion etching; ridge-waveguide laser diodes; threshold current; vertical angle; Diode lasers; Etching; Molecular beam epitaxial growth; Optical device fabrication; Optical pulses; Planarization; Polyimides; Power generation; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.826899

Filename

826899