Selenium doping effects and low-threshold high-power GaInP-AlGaInP single-quantum-well lasers grown by MOVPE

Author

Wu, Linzhang ; Zhang, Yanshen

Author_Institution

Dept. of Precision Instrum., Tsinghua Univ., Beijing, China

Volume

12

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

248

Lastpage

250

Abstract

Visible light (670 nm), compressively strained single-quantum-well GaInP-AlGaInP lasers were fabricated from epitaxial wafers grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). By investigation on selenium doping in n-type cladding layers, high quality GaInP-AlGaInP lasers that emit around a wavelength of 670 nm were realized, which have an ultralow-threshold current density of 238 A/cm/sub 2/, high characteristic temperature of 150 K in the pulse mode. Additionally, a record high power of 1.55 W per facet (3.11 W total) was achieved for the broad-area gain guided lasers.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; current density; gallium compounds; indium compounds; laser beams; laser modes; optical fabrication; optical pulse generation; quantum well lasers; semiconductor doping; vapour phase epitaxial growth; 1.55 W; 150 K; 3.11 W; 670 nm; GaInP-AlGaInP; GaInP-AlGaInP lasers; MOVPE; Se doping effects; broad-area gain guided lasers; characteristic temperature; compressively strained single-quantum-well lasers; epitaxial wafers; fabrication; low-pressure metal-organic vapor phase epitaxy; n-type cladding layers; pulse mode; single-quantum-well lasers; ultralow-threshold current density; visible light; Doping; Epitaxial growth; Fiber lasers; Indium phosphide; Laser modes; Optical pumping; Optical recording; Quantum well lasers; Semiconductor lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.826903

Filename

826903