Dependence of the light-current characteristics of 1.55-μm broad-area lasers on different p-doping profiles

Author

Han, I.K. ; Cho, S.H. ; Heim, P.J.S. ; Woo, D.H. ; Kim, S.H. ; Song, Jong Hyun ; Johnson, F.G. ; Dagenais, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

Volume

12

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

251

Lastpage

253

Abstract

We have investigated the dependence of the light-current characteristics of broad-area lasers with different p-doping profiles for a two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser. A sizable increase of the optical output power is observed in a structure with delta doping at the heterointerfaces and moderate doping in the thick SCH layer. It is also shown that the characteristic temperature (T₀) of the structure with delta doping at the heterointerfaces and moderate doping at the thick SCH layer is almost constant as the measurement temperature is increased. Such an improvement in device performance is attributed to a reduction of carrier leakage to the SCH layer.

Keywords

Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor doping; waveguide lasers; 1.55 micron; InGaAs-InP; InGaAs-InP laser; broad-area lasers; carrier leakage; characteristic temperature; delta doping; device performance; heterointerfaces; light-current characteristics; measurement temperature; moderate doping; multiple quantum well laser; optical output power; p-doping profiles; two-step separate-confinement heterostructure; Electrons; Laser modes; Leakage current; Quantum well devices; Semiconductor device doping; Semiconductor lasers; Temperature measurement; Threshold current; Voltage; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.826904

Filename

826904