Title :
A quantum cascade laser based on an n-i-p-i superlattice
Author :
Faist, Jerome ; Müller, Antoine ; Beck, Mattias ; Hofstetter, Daniel ; Blaser, Stephane ; Oesterle, Ursula ; Ilegems, Marc
Author_Institution :
Neuchatel Univ., Switzerland
fDate :
3/1/2000 12:00:00 AM
Abstract :
We demonstrate a quantum cascade laser with a novel injection concept. Periodic insertion of silicon- and beryllium-doped layers are used to control locally the internal electric field in the active region. This concept is demonstrated experimentally using an active region based on a periodic superlattice.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; gallium arsenide; indium compounds; laser beams; laser transitions; quantum well lasers; semiconductor lasers; semiconductor superlattices; waveguide lasers; AlInAs; Be-doped layers; InGaAs; InGaAs-AlInAs; Si-doped layers; active region; injection concept; internal electric field; n-i-p-i superlattice; periodic insertion; periodic superlattice; quantum cascade laser; Chirp; Dielectric constant; Doping; Electrons; Oscillators; Quantum cascade lasers; Quantum well lasers; Superlattices; Threshold current; Tunneling;
Journal_Title :
Photonics Technology Letters, IEEE
