Title :
0.85-μm vertical-cavity surface-emitting laser diode arrays grown on p-type GaAs substrate
Author :
Kohama, Y. ; Ohiso, Y. ; Tateno, K. ; Kurokawa, T.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
We have fabricated the first room-temperature (RT) continuous-wave (CW) 0.85-μm 8×8 bottom-emitting vertical-cavity surface-emitting AlGaAs-GaAs DBR QW laser diode (VCSEL) arrays on a p-type GaAs substrate, which are applicable to optical interconnection. The laser characteristics are slightly inferior to those of VCSEL arrays made on n-type GaAs substrate with the same reflectivity, but exhibit for better array uniformity of threshold current density than previously reported. Such devices are applicable to N-MOS integration.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; infrared sources; integrated optoelectronics; laser cavity resonators; laser transitions; optical fabrication; optical interconnections; quantum well lasers; reflectivity; semiconductor laser arrays; 0.85 mum; AlGaAs-GaAs; N-MOS integration; VCSEL arrays; array uniformity; bottom-emitting vertical-cavity surface-emitting AlGaAs-GaAs DBR QW laser diode; continuous-wave; laser arrays; laser characteristics; n-type GaAs substrate; optical interconnection; p-type GaAs substrate; reflectivity; room-temperature; threshold current density; vertical-cavity surface-emitting laser diode arrays; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Optical arrays; Optical interconnections; Reflectivity; Semiconductor laser arrays; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
