Proton bombardment for enhanced four-wave mixing in InGaAsP-InP waveguides

Author

Thoen, E.R. ; Donnelly, J.P. ; Groves, S.H. ; Hall, K.L. ; Ippen, E.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

12

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

311

Lastpage

313

Abstract

A model for the transmission and four-wave mixing (FWM) conversion efficiency of InGaAsP-InP passive quantum-well (QW) waveguides which includes the effect of an additional nonlinear loss due to the accumulation of photogenerated free carriers is introduced and compared to experimental measurements. The model accurately describes the observed loss at high average powers and predicts that a reduction in the carrier lifetime of 10-100 times should effectively eliminate free carrier effects. Proton bombardment was investigated as a means of reducing the carrier lifetime, and both the conversion efficiency and relative transmission of proton bombarded single QW and multiple QW devices were significantly improved compared to unbombarded devices.

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; gallium arsenide; gallium compounds; indium compounds; multiwave mixing; optical waveguides; proton effects; semiconductor quantum wells; InGaAsP-InP; InGaAsP-InP passive QW waveguides; InGaAsP-InP waveguides; carrier lifetime; conversion efficiency; enhanced four-wave mixing; four-wave mixing conversion efficiency; free carrier effects; high average powers; nonlinear loss; observed loss; photogenerated free carriers; proton bombarded single QW devices; proton bombardment; Charge carrier lifetime; Four-wave mixing; Frequency conversion; Laboratories; Optical waveguides; Optical wavelength conversion; Predictive models; Protons; Quantum wells; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.826924

Filename

826924