• DocumentCode
    1309254
  • Title

    Solid phase crystallisation using inline furnace system

  • Author

    Kim, Maeng Jun ; Jin, G.H. ; Yu, Cody Hao ; Kim, Scott C. ; Song, Jong Hyun

  • Author_Institution
    Org. Light Emitting Display, Res. Inst., Samsung Mobile Display Co. Ltd., Yongin, South Korea
  • Volume
    47
  • Issue
    17
  • fYear
    2011
  • Firstpage
    978
  • Lastpage
    980
  • Abstract
    The use of an inline furnace has been evaluated for solid phase crystallisation (SPC) of amorphous silicon films to improve throughput without sacrificing thin-film transistor performance. An attempt was made to develop the SPC process at temperatures of 700°C without causing any glass distortion. The characteristics of a fabricated p-channel active material exhibited a field effect mobility of 16.9 cm2/Vs, a threshold voltage of -4.6-V and a subthreshold swing of 0.9-V/dec.
  • Keywords
    amorphous semiconductors; crystallisation; elemental semiconductors; semiconductor thin films; silicon; solid-state phase transformations; thin film transistors; Si; amorphous silicon films; field effect mobility; inline furnace system; p-channel active material; solid phase crystallisation; subthreshold swing; temperature 700 degC; thin-film transistor performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.1698
  • Filename
    6004748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1309254