Title :
Solid phase crystallisation using inline furnace system
Author :
Kim, Maeng Jun ; Jin, G.H. ; Yu, Cody Hao ; Kim, Scott C. ; Song, Jong Hyun
Author_Institution :
Org. Light Emitting Display, Res. Inst., Samsung Mobile Display Co. Ltd., Yongin, South Korea
Abstract :
The use of an inline furnace has been evaluated for solid phase crystallisation (SPC) of amorphous silicon films to improve throughput without sacrificing thin-film transistor performance. An attempt was made to develop the SPC process at temperatures of 700°C without causing any glass distortion. The characteristics of a fabricated p-channel active material exhibited a field effect mobility of 16.9 cm2/Vs, a threshold voltage of -4.6-V and a subthreshold swing of 0.9-V/dec.
Keywords :
amorphous semiconductors; crystallisation; elemental semiconductors; semiconductor thin films; silicon; solid-state phase transformations; thin film transistors; Si; amorphous silicon films; field effect mobility; inline furnace system; p-channel active material; solid phase crystallisation; subthreshold swing; temperature 700 degC; thin-film transistor performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.1698
