• DocumentCode
    1309259
  • Title

    3.6 μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

  • Author

    Vizbaras, K. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
  • Volume
    47
  • Issue
    17
  • fYear
    2011
  • Firstpage
    980
  • Lastpage
    981
  • Abstract
    Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6 μm is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862 A/cm2 at infinite resonator length at 15°C and 20°mW of average output power per facet.
  • Keywords
    III-V semiconductors; aluminium compounds; arsenic compounds; current density; gallium compounds; indium compounds; laser cavity resonators; optical pulse generation; quantum well lasers; ridge waveguides; waveguide lasers; AlGaInAsSb; compressively strained quantum-wells; episide-up mounted ridge waveguide lasers; optical resonator; pulsed operation; quinternary barriers; temperature 293 K to 298 K; threshold current density; type-I lasers; wavelength 3.6 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.2032
  • Filename
    6004749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1309259