DocumentCode
1309522
Title
High frequency gallium arsenide linearised transconductor for communications
Author
Haigh, D.G. ; Toumazou, C.
Author_Institution
Univ. Coll., London, UK
Volume
26
Issue
8
fYear
1990
fDate
4/14/1990 12:00:00 AM
Firstpage
497
Lastpage
498
Abstract
The authors propose a linear transconductor circuit for implementation in GaAs MESFET technology. The application of the transconductor to linear microwave amplifiers and linear drive circuits for optical systems is described.
Keywords
III-V semiconductors; Schottky gate field effect transistors; driver circuits; field effect transistor circuits; gallium arsenide; microwave amplifiers; optical communication equipment; solid-state microwave circuits; GaAs; MESFET technology; laser diode driver; linear drive circuits; linear microwave amplifiers; linear transconductor circuit; optical systems;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900323
Filename
82706
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