Title :
Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs]
Author :
Ecoffet, R. ; Duzellier, S. ; Falguère, D. ; Guibert, L. ; Inguimbert, C.
Author_Institution :
CNES, Toulouse, France
fDate :
12/1/1997 12:00:00 AM
Abstract :
This paper reports on results from high energy heavy ion testing of devices. The low LET zones of the cross-section curves are explored. High and low energy measurements are compared
Keywords :
DRAM chips; SRAM chips; integrated circuit testing; ion beam effects; space vehicle electronics; C; DRAMs; IC radiation effects; LET cross-section measurements; SRAMs; energy measurements; high energy heavy ion testing; space vehicle electronics; Cosmic rays; Energy measurement; Error correction; Ionization; Particle beams; Protons; Random access memory; Space stations; Testing; USA Councils;
Journal_Title :
Nuclear Science, IEEE Transactions on
