DocumentCode
1309604
Title
Controlled amplifier modelocked Er3+ fibre ring laser
Author
Burns, D. ; Sibbett, W.
Author_Institution
Dept. of Phys. & Astron., St. Andrews Univ., UK
Volume
26
Issue
8
fYear
1990
fDate
4/14/1990 12:00:00 AM
Firstpage
505
Lastpage
506
Abstract
An erbium-doped fibre ring has been actively modelocked with an InGaAsP semiconductor amplifier employed as a modulator. Pulses having durations <4ps and peak powers of approximately 2 W around 1536 nm have been generated at a repetition frequency of 612 MHz by this new technique of controlled-amplifier modelocking (CAM).
Keywords
erbium; laser mode locking; laser transitions; optical fibres; silicon compounds; solid lasers; 1536 nm; 2 W; 3.7 to 4 ps; 612 MHz; Er doped silica fibre; Er 3+ fibre ring laser; InGaAsP semiconductor amplifier; SiO 2:Er 3+; actively modelocked; controlled-amplifier modelocking; intracavity modulator; picosecond pulse generation; solid lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900328
Filename
82711
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