Title :
Broadband operation of InGaAsP-InGaAs GRIN-SC-MQW BH amplifiers with 115 mW output power
Author :
Bagley, M. ; Sherlock, G. ; Cooper, D.M. ; Westbrook, L.D. ; Elton, D.J. ; Wickes, H.J. ; Spurdens, P.C. ; Devlin, W.J.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
4/14/1990 12:00:00 AM
Abstract :
Broadband operation of GRIN-SC-MQW BH amplifiers is reported with 115 mW output power at 1.54 mu m and 3 dB gain compression. Gain is flat to 0.7 dB over the range 1.42-1.55 mu m. Polarisation sensitivity reduces from 4.5 dB at 1.55 mu m to 1.4 dB at 1.415 mu m.
Keywords :
III-V semiconductors; amplifiers; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser transitions; semiconductor junction lasers; 1.415 to 1.55 micron; 115 mW; 8.4 to 13.3 dB; GRIN-SC-MQW BH amplifiers; III-V semiconductors; InGaAsP-InGaAs; broadband operation; buried heterostructure; multiple quantum well; polarisation sensitivity; semiconductor lasers; separate confinement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900333
