DocumentCode :
1309740
Title :
The potential of biopolar devices in LSI gigabit logic
Author :
Knorr, Siegfried G.
Author_Institution :
Dept. of Electrical Engng., Univ. of California, Los Angeles, CA, USA
Volume :
3
Issue :
1
fYear :
1981
fDate :
3/1/1981 12:00:00 AM
Firstpage :
2
Lastpage :
6
Abstract :
The logic swing can be reduced to improve propagation delays without affecting the noise margin due to switching transients. The author proposes a simple differential CML gate with small-geometry bipolar devices which can operate at gigabit logic speeds and at sub mW power levels. It is well suited to compete with GaAs technologies.
Keywords :
bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; integrated logic circuits; large scale integration; silicon; ECL; LSI gigabit logic; Si bipolar LSI; current mode logic; delay reduction; differential CML gate; emitter coupled logic; logic swing reduction; noise margin; propagation; small-geometry bipolar devices; sub mW power levels; Gallium arsenide; Large scale integration; Logic gates; Noise; Solid state circuits; Switches; Transient analysis;
fLanguage :
English
Journal_Title :
Circuits & Systems Magazine
Publisher :
ieee
ISSN :
0163-6812
Type :
jour
DOI :
10.1109/MCAS.1981.6323785
Filename :
6323785
Link To Document :
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