• DocumentCode
    1309740
  • Title

    The potential of biopolar devices in LSI gigabit logic

  • Author

    Knorr, Siegfried G.

  • Author_Institution
    Dept. of Electrical Engng., Univ. of California, Los Angeles, CA, USA
  • Volume
    3
  • Issue
    1
  • fYear
    1981
  • fDate
    3/1/1981 12:00:00 AM
  • Firstpage
    2
  • Lastpage
    6
  • Abstract
    The logic swing can be reduced to improve propagation delays without affecting the noise margin due to switching transients. The author proposes a simple differential CML gate with small-geometry bipolar devices which can operate at gigabit logic speeds and at sub mW power levels. It is well suited to compete with GaAs technologies.
  • Keywords
    bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; integrated logic circuits; large scale integration; silicon; ECL; LSI gigabit logic; Si bipolar LSI; current mode logic; delay reduction; differential CML gate; emitter coupled logic; logic swing reduction; noise margin; propagation; small-geometry bipolar devices; sub mW power levels; Gallium arsenide; Large scale integration; Logic gates; Noise; Solid state circuits; Switches; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Circuits & Systems Magazine
  • Publisher
    ieee
  • ISSN
    0163-6812
  • Type

    jour

  • DOI
    10.1109/MCAS.1981.6323785
  • Filename
    6323785