DocumentCode
1309740
Title
The potential of biopolar devices in LSI gigabit logic
Author
Knorr, Siegfried G.
Author_Institution
Dept. of Electrical Engng., Univ. of California, Los Angeles, CA, USA
Volume
3
Issue
1
fYear
1981
fDate
3/1/1981 12:00:00 AM
Firstpage
2
Lastpage
6
Abstract
The logic swing can be reduced to improve propagation delays without affecting the noise margin due to switching transients. The author proposes a simple differential CML gate with small-geometry bipolar devices which can operate at gigabit logic speeds and at sub mW power levels. It is well suited to compete with GaAs technologies.
Keywords
bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; integrated logic circuits; large scale integration; silicon; ECL; LSI gigabit logic; Si bipolar LSI; current mode logic; delay reduction; differential CML gate; emitter coupled logic; logic swing reduction; noise margin; propagation; small-geometry bipolar devices; sub mW power levels; Gallium arsenide; Large scale integration; Logic gates; Noise; Solid state circuits; Switches; Transient analysis;
fLanguage
English
Journal_Title
Circuits & Systems Magazine
Publisher
ieee
ISSN
0163-6812
Type
jour
DOI
10.1109/MCAS.1981.6323785
Filename
6323785
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