Comparison of single event phenomena for front/back irradiations

Author

Musseau, O. ; Ferlet-Cavrois, V. ; Campbel, A.B. ; Stapor, W.J. ; McDonald, P.T.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2250

Lastpage

2255

Abstract

For devices irradiated from the front and the back, where ions have the same LET in the sensitive volumes, the SEU sensitivities and charge collection spectra are different. A specific test setup has been developed to make precise measurements of both collected charge and SEU in CMOS SRAMs. We present a set of new data and discuss the possible experimental artifacts that could affect these measurements. In all the cases, the device is more sensitive when irradiated from the back than from the front. This phenomenon seems related to energy transfer mechanisms from the ion to the material target, with secondary particles from both electronic and nuclear reactions being forward emitted. This effect may influence net sensitivity of scaled down devices, with shallow sensitive layers, and heavy metal interconnects

Keywords

CMOS memory circuits; SRAM chips; cosmic ray interactions; integrated circuit interconnections; integrated circuit testing; ion beam effects; space vehicle electronics; CMOS SRAMs; LET; SEU sensitivities; back irradiation; charge collection spectra; energy transfer mechanisms; front irradiation; heavy metal interconnects; net sensitivity; scaled down devices; secondary particles; shallow sensitive layers; single event phenomena; CMOS technology; Charge measurement; Current measurement; Ion beams; Laboratories; Packaging; Protons; Silicon; Single event upset; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.659043

Filename

659043