Charge collection and SEU from angled ion strikes

Author

Dodd, P.E. ; Shaneyfelt, M.R. ; Sexton, F.W.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2256

Lastpage

2265

Abstract

Charge collection and SEU from angled ion strikes are studied using three-dimensional simulation. The physics of charge collection in unloaded diodes and transistors is explored, as is the angular dependence of upset threshold in CMOS SRAMs. The simulation results are compared to analytical models for charge collection. Modeling fundamental transport in SRAMs, the true effective LET relationship is computed and used to analyze experimental heavy-ion data. Impacts on SEU test methodology are discussed

Keywords

CMOS memory circuits; circuit analysis computing; integrated circuit modelling; integrated circuit testing; ion beam effects; CMOS SRAMs; SEU; SEU test methodology; analytical models; angled ion strikes; charge collection; fundamental transport; heavy-ion data; three-dimensional simulation; true effective LET relationship; unloaded diodes; unloaded transistors; upset threshold; Analytical models; Circuit simulation; Circuit testing; Computational modeling; Data analysis; Electric breakdown; Laboratories; Physics; Semiconductor diodes; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.659044

Filename

659044