Title :
Charge collection and SEU from angled ion strikes
Author :
Dodd, P.E. ; Shaneyfelt, M.R. ; Sexton, F.W.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Charge collection and SEU from angled ion strikes are studied using three-dimensional simulation. The physics of charge collection in unloaded diodes and transistors is explored, as is the angular dependence of upset threshold in CMOS SRAMs. The simulation results are compared to analytical models for charge collection. Modeling fundamental transport in SRAMs, the true effective LET relationship is computed and used to analyze experimental heavy-ion data. Impacts on SEU test methodology are discussed
Keywords :
CMOS memory circuits; circuit analysis computing; integrated circuit modelling; integrated circuit testing; ion beam effects; CMOS SRAMs; SEU; SEU test methodology; analytical models; angled ion strikes; charge collection; fundamental transport; heavy-ion data; three-dimensional simulation; true effective LET relationship; unloaded diodes; unloaded transistors; upset threshold; Analytical models; Circuit simulation; Circuit testing; Computational modeling; Data analysis; Electric breakdown; Laboratories; Physics; Semiconductor diodes; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
