• DocumentCode
    1309998
  • Title

    VLSI parasitic capacitance determination by flux tubes

  • Author

    Dierking, W.H. ; Bastian, J.D.

  • Author_Institution
    Rockwell Internat. Microelectronics Res. & Dev. Center, Anaheim, CA, USA
  • Volume
    4
  • Issue
    1
  • fYear
    1982
  • fDate
    3/1/1982 12:00:00 AM
  • Firstpage
    11
  • Lastpage
    18
  • Abstract
    A two-dimensional numerical approach for calculating capacitance between two conductors through different dielectrics is developed. The approach uses Laplace´s equation in two dimensions to determine potentials on a grid system between the conductors. Equipotential lines are generated using these potentials and curvilinear squares can be formed to construct the flux tubes between the conductors. The application of Gauss´s law to these potentials provides the charge on a conductor and results in the determination of capacitance values.
  • Keywords
    capacitance; large scale integration; numerical methods; Gauss´s law; Laplace´s equation; VLSI parasitic capacitance determination; curvilinear squares; flux tubes; grid system; two-dimensional numerical approach; Capacitance; Computers; Conductors; Dielectrics; Electric potential; Electron tubes; Mirrors;
  • fLanguage
    English
  • Journal_Title
    Circuits & Systems Magazine
  • Publisher
    ieee
  • ISSN
    0163-6812
  • Type

    jour

  • DOI
    10.1109/MCAS.1982.6323835
  • Filename
    6323835