Title :
Experimental investigation of a Q-switched triple contact InGaAs bow-tie diode laser
Author :
Cakmak, B. ; Williams, K.A. ; Penty, R.V. ; White, I.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
fDate :
12/1/1999 12:00:00 AM
Abstract :
In this study the authors investigate high-energy picosecond pulse generation in a three contact two quantum well (QW) p-doped InGaAs bow-tie diode laser using a passive Q switching technique. Picosecond duration pulses with pulse energies of 39 pJ and peak powers in excess of 700 mW are obtained from the device in a well defined single lobed far-field. The pulses have typically 45 to 55 ps durations (FWHM). Unwanted tails can be presented by adjusting the reverse-bias voltage
Keywords :
III-V semiconductors; Q-switching; gallium arsenide; high-speed optical techniques; indium compounds; quantum well lasers; 39 pJ; 45 to 55 ps; 700 mW; InGaAs; Q-switched triple contact InGaAs bow-tie diode laser; experimental investigation; high-energy picosecond pulse generation; passive Q switching technique; peak powers; picosecond duration pulses; ps durations; pulse energies; quantum well p-doped InGaAs bow-tie diode laser; reverse-bias voltage; single lobed far-field;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19990840
