Title :
Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits
Author :
Burns, J.L. ; Choma, J., Jr.
Author_Institution :
Univ. of California, Berkeley, CA, USA
fDate :
3/1/1982 12:00:00 AM
Abstract :
A circuit model for an existing silicon integrated bipolar junction transistor is exercised to evaluate presently available high frequency circuit performance. The relationship among circuit model and processing parameters are semi-quantitatively explored to offer predictions on the frequency response which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced to quantify optimized performance levels.
Keywords :
bipolar integrated circuits; circuit analysis computing; frequency response; semiconductor device models; SPICE simulation; Si bipolar integrated circuits; bipolar junction transistor; circuit model; computer aided prediction; figure of merit; frequency response; high frequency circuit performance; processing parameters; Capacitance; Integrated circuit modeling; Junctions; Resistance; Silicon; Substrates; Transistors;
Journal_Title :
Circuits & Systems Magazine
DOI :
10.1109/MCAS.1982.6323836
