• DocumentCode
    1310004
  • Title

    Gate-First \\hbox {TaN/La}_{2}\\hbox {O}_{3}/ \\hbox {SiO}_{2}/\\hbox {Ge} n-MOSFETs Using Laser Annealing

  • Author

    Chen, W.B. ; Wu, C.H. ; Shie, B.S. ; Chin, Albert

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    31
  • Issue
    11
  • fYear
    2010
  • Firstpage
    1184
  • Lastpage
    1186
  • Abstract
    To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ~105 forwardreverse current in the source-drain n+/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm2/Vs and a good mobility of 304 cm2/Vs at a 1.9-nm equivalent oxide thickness.
  • Keywords
    MOSFET; annealing; germanium; lanthanum compounds; laser materials processing; silicon compounds; tantalum compounds; TaN-La2O3-SiO2-Ge; device performance; gate first n-MOSFET; laser annealing; low sheet resistance; size 1.9 nm; source-drain junction; Annealing; Junctions; Logic gates; MOSFET circuits; Measurement by laser beam; Semiconductor lasers; Ge; high-$kappa$ gate dielectric; laser annealing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2063692
  • Filename
    5560719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1310004