DocumentCode :
1310004
Title :
Gate-First 
n-MOSFETs Using Laser Annealing
Author :
Chen, W.B. ; Wu, C.H. ; Shie, B.S. ; Chin, Albert
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
31
Issue :
11
fYear :
2010
Firstpage :
1184
Lastpage :
1186
Abstract :
To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ~105 forwardreverse current in the source-drain n+/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm2/Vs and a good mobility of 304 cm2/Vs at a 1.9-nm equivalent oxide thickness.
Keywords :
MOSFET; annealing; germanium; lanthanum compounds; laser materials processing; silicon compounds; tantalum compounds; TaN-La2O3-SiO2-Ge; device performance; gate first n-MOSFET; laser annealing; low sheet resistance; size 1.9 nm; source-drain junction; Annealing; Junctions; Logic gates; MOSFET circuits; Measurement by laser beam; Semiconductor lasers; Ge; high-$kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2063692
Filename :
5560719
Link To Document :
