Title :
Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs
Author :
Endo, Kazuhiko ; O´Uchi, Shin´Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku
Author_Institution :
Nonelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.
Keywords :
MOSFET; SRAM chips; compensation; FinFET SRAM cells; TiN; cell stability; compensation; independent-DG FinFET; independent-double-gate; voltage 0.5 V; FinFETs; International Electron Devices Meeting; Logic gates; Noise; Random access memory; Tin; FinFET; SRAM; independent double gate (IDG); metal gate (MG); variation; work function (WF);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2062483
