• DocumentCode
    1310024
  • Title

    Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

  • Author

    Endo, Kazuhiko ; O´Uchi, Shin´Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku

  • Author_Institution
    Nonelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • Volume
    31
  • Issue
    10
  • fYear
    2010
  • Firstpage
    1095
  • Lastpage
    1097
  • Abstract
    The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.
  • Keywords
    MOSFET; SRAM chips; compensation; FinFET SRAM cells; TiN; cell stability; compensation; independent-DG FinFET; independent-double-gate; voltage 0.5 V; FinFETs; International Electron Devices Meeting; Logic gates; Noise; Random access memory; Tin; FinFET; SRAM; independent double gate (IDG); metal gate (MG); variation; work function (WF);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2062483
  • Filename
    5560721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1310024