Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique

Author

McMorrow, Dale ; Melinger, Joseph S. ; Knudson, Alvin R. ; Buchner, Stephen ; Ikossi-Anastasiou, Kiki ; Moss, Steven C. ; Engelhardt, David ; Childs, Timothy ; Campbell, Arthur B.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2290

Lastpage

2297

Abstract

A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of the LT GaAs growth temperature are presented for the multilayer GaAs structures that are used for device fabrication. The markedly non-exponential nature of the measured transients is a consequence of the multilayer structure of the wafers. The carrier lifetime measurements are correlated with available SEU data measured for structures fabricated with LT GaAs buffers with different growth temperatures

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; ion beam effects; molecular beam epitaxial growth; semiconductor epitaxial layers; transient analysis; GaAs; MBE; SEU data; carrier lifetime; device fabrication; femtosecond transient reflectivity technique; growth temperatures; heavy ions; multilayer epitaxial wafers; nonexponential measured transients; Buffer layers; Charge carrier lifetime; Circuits; Current measurement; Fabrication; Gallium arsenide; Nonhomogeneous media; Reflectivity; Single event upset; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.659048

Filename

659048