DocumentCode
1310066
Title
Density-of-States Modeling of Solution-Processed InGaZnO Thin-Film Transistors
Author
Kim, Chang Eun ; Cho, Edward Namkyu ; Moon, Pyung ; Kim, Gun Hee ; Kim, Dong Lim ; Kim, Hyun Jae ; Yun, Ilgu
Author_Institution
Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Volume
31
Issue
10
fYear
2010
Firstpage
1131
Lastpage
1133
Abstract
The effects of Ga composition on the performance of InGaZnO (IGZO) thin-film transistors (TFTs) prepared by a sol-gel method are investigated, and the density of states (DOS) is characterized by the device modeling. The TFT mode is changed from a depletion type to an enhancement type, and the extracted DOS parameters are reduced with the increase of Ga contents. The extracted DOS distribution has a higher peak value than that of an IGZO TFT prepared by physical vapor deposition.
Keywords
indium compounds; sol-gel processing; thin film transistors; vapour deposition; InGaZnO; density-of-states modeling; physical vapor deposition; sol-gel method; thin-film transistors; Analytical models; Ions; Semiconductor device measurement; Sputtering; Thin film transistors; Zinc; Density of states (DOS); InGaZnO (IGZO); modeling; thin-film transistors (TFTs);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2061832
Filename
5560727
Link To Document