Erbium-Doped Waveguide Laser in Tantalum Pentoxide

Author

Subramanian, Ananth Z. ; Oton, Claudio J. ; Shepherd, David P. ; Wilkinson, James S.

Author_Institution

Optoelectron. Res. Centre, Univ. of Southampton, Southampton, UK

Volume

22

Issue

21

fYear

2010

Firstpage

1571

Lastpage

1573

Abstract

Tantalum pentoxide (Ta₂O₅) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta₂O₅ rib waveguides doped with 2.7 10²⁰ erbium ions/cm³, which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.

Keywords

erbium; integrated optics; optical pumping; optical waveguides; solid lasers; tantalum compounds; Si; Ta₂O₅:Er; dense photonic circuits; diode pump power threshold; diode-pumped laser action; erbium-doped waveguide laser; high index material; magnetron sputtering; oxidized silicon wafer; potential functionality; power 14 mW; rib waveguides; size 2.3 cm; tantalum pentoxide; wavelength 1558 nm to 1562 nm; Absorption; Cavity resonators; Erbium; Laser excitation; Optical waveguides; Pump lasers; Waveguide lasers; Erbium; integrated optics; laser amplifiers; optical materials; optical planar waveguide components;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2072495

Filename

5560730