DocumentCode
1310107
Title
Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits
Author
Weatherford, T.R. ; Marshall, P.W. ; Marshall, C.J. ; Fouts, D.J. ; Mathes, B. ; LaMacchia, M.
Author_Institution
Naval Postgraduate Sch., Monterey, CA, USA
Volume
44
Issue
6
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
2298
Lastpage
2305
Abstract
Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits
Keywords
III-V semiconductors; field effect digital integrated circuits; gallium arsenide; ion beam effects; molecular beam epitaxial growth; semiconductor epitaxial layers; space vehicle electronics; GaAs; HIGFET circuits; IC radiation effects; MBE; SEE sensitivity; buffer layer; digital ICs; growth temperature; heavy-ion single event effects; heterostructure insulated gate FET; low-temperature buffer-layer thickness; space-based applications; Buffer layers; Circuits; Clocks; FETs; Gallium arsenide; Logic arrays; MESFETs; Power dissipation; Single event upset; Temperature sensors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.659049
Filename
659049
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