Title :
Metal-semiconductor-metal ultraviolet photodetectors using 6H-SiC
Author :
Zhang, Y.G. ; Li, A.Z. ; Milnes, A.G.
Author_Institution :
State Key Lab., Shanghai Inst. of Metall., China
fDate :
3/1/1997 12:00:00 AM
Abstract :
Metal-semiconductor-metal (MSM) UV photodetectors on n-type 6H-SiC epitaxial wafers have been reported for the first time, in which no p-n junctions or ohmic contacts are needed. Peak response wavelength at 340 nm and dark current of 1 pA at 20-V bias voltage have been measured. The photodetectors also show fair response to 193-nm wavelength deep UV light.
Keywords :
dark conductivity; hydrogen; metal-semiconductor-metal structures; metallic thin films; optical films; semiconductor thin films; silicon compounds; ultraviolet detectors; 1 pA; 193 nm; 20 V; 6H-SiC; H-SiC; UV photodetectors; bias voltage; dark current; fair response; metal-semiconductor-metal ultraviolet photodetectors; n-type 6H-SiC epitaxial wafers; nm wavelength deep UV light; peak response wavelength; Current measurement; Dark current; Epitaxial layers; Ohmic contacts; Optical materials; P-n junctions; Photodetectors; Schottky barriers; Silicon carbide; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
