THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

Author

Deal, William ; Mei, X.B. ; Leong, Kevin M K H ; Radisic, Vesna ; Sarkozy, S. ; Lai, Richard

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

Volume

1

Issue

1

fYear

2011

Firstpage

25

Lastpage

32

Abstract

In this paper, background describing THz monolithic integrated circuits using InP HEMT is presented. This three-terminal transistor technology has been used to realize amplifiers, mixers, and multipliers operating at 670 GHz. Transistor and processing technology, packaging technology, and circuit results at 670 GHz are described. The paper concludes with initial results from a 670-GHz InP HEMT receiver and trends for InP HEMT components.

Keywords

HEMT integrated circuits; III-V semiconductors; indium compounds; integrated circuit packaging; monolithic integrated circuits; submillimetre wave integrated circuits; submillimetre wave receivers; HEMT receiver; InP; THz monolithic integrated circuits; frequency 670 GHz; high electron mobility transistors; packaging technology; processing technology; three-terminal transistor technology; Coplanar waveguides; Gain; HEMTs; Indium phosphide; Semiconductor device measurement; Substrates; Active semiconductor circuit; solid-state sensor; solid-state source; three-terminal device;

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2011.2159539

Filename

6005329