Title :
THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors
Author :
Deal, William ; Mei, X.B. ; Leong, Kevin M K H ; Radisic, Vesna ; Sarkozy, S. ; Lai, Richard
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
In this paper, background describing THz monolithic integrated circuits using InP HEMT is presented. This three-terminal transistor technology has been used to realize amplifiers, mixers, and multipliers operating at 670 GHz. Transistor and processing technology, packaging technology, and circuit results at 670 GHz are described. The paper concludes with initial results from a 670-GHz InP HEMT receiver and trends for InP HEMT components.
Keywords :
HEMT integrated circuits; III-V semiconductors; indium compounds; integrated circuit packaging; monolithic integrated circuits; submillimetre wave integrated circuits; submillimetre wave receivers; HEMT receiver; InP; THz monolithic integrated circuits; frequency 670 GHz; high electron mobility transistors; packaging technology; processing technology; three-terminal transistor technology; Coplanar waveguides; Gain; HEMTs; Indium phosphide; Semiconductor device measurement; Substrates; Active semiconductor circuit; solid-state sensor; solid-state source; three-terminal device;
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2011.2159539
