DocumentCode :
1310244
Title :
An efficient photoresist development simulator based on cellular automata with experimental verification
Author :
Karafyllidis, Ioannis ; Hagouel, Paul Issac ; Thanailakis, Antonios ; Neureuther, Andrew R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Democritus Univ. of Thrace, Xanthi, Greece
Volume :
13
Issue :
1
fYear :
2000
fDate :
2/1/2000 12:00:00 AM
Firstpage :
61
Lastpage :
75
Abstract :
An efficient and practical photoresist development simulator based on cellular automata is presented. Image reversal and chemical amplification processes are also simulated using this simulator. To verify the simulator, a series of experiments have been designed and performed using the Shipley SNR-248 negative resist, a stepper, and a deep ultraviolet source at 248 nm. Experiments were performed for periodic and isolated lines with pitches 300, 400, 500, and 1000 nm, for exposure energy doses of 11, 13, 17, and 23 mJ/cm2, and with developer temperatures of 0, 20, and 80°C. In all cases, the simulator results were found to be in very good agreement with the corresponding experimental results. The simulator has also successfully reproduced the incomplete opening effect observed in the case of close-spaced parallel lines
Keywords :
cellular automata; photoresists; semiconductor process modelling; ultraviolet lithography; 0 to 80 degC; 248 nm; 300 to 1000 nm; Shipley SNR-248 negative resist; cellular automata; chemical amplification processes; close-spaced parallel lines; deep ultraviolet source; developer temperatures; exposure energy doses; image reversal; incomplete opening effect; isolated lines; periodic lines; photoresist development simulator; Chemical processes; Circuit simulation; Distribution functions; Etching; Fabrication; Integrated circuit technology; Isolation technology; Lithography; Resists; Testing;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.827346
Filename :
827346
Link To Document :
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