Title :
Low threshold planarized vertical-cavity surface-emitting lasers
Author :
Geels, R.S. ; Corzine, S.W. ; Scott, J.W. ; Young, D.B. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
Vertical-cavity surface-emitting lasers fabricated utilizing a self-aligned process to provide planarized contacts are discussed. A single 80-AA In/sub 0.2/Ga/sub 0.8/As strained quantum well was used in the active region. Emission was at 963 nm. Threshold currents under continuous-wave room temperature operation of 1.1 mA, at 4.0-V bias, were measured for numerous 12- mu m*12- mu m devices. Corresponding threshold current densities were 800 A/cm/sup 2/ (600 A/cm/sup 2/ for broad area devices). These are the lowest figures yet reported for this type of device. It was found that grading of the mirror had a marked effect on mirror resistance.<>
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; mirrors; semiconductor junction lasers; semiconductor quantum wells; 1.1 mA; 12 micron; 4 V; 80 AA; 963 nm; In/sub 0.2/Ga/sub 0.8/As; active region; broad area devices; continuous-wave room temperature operation; low threshold lasers; mirror; mirror grading; mirror resistance; planarized contacts; planarized vertical-cavity; self-aligned process; strained quantum well; surface-emitting lasers; threshold current densities; threshold currents; Etching; Fiber lasers; Gallium arsenide; Laser modes; Mirrors; Optical surface waves; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
