Title :
FPGA Based on Integration of CMOS and RRAM
Author :
Tanachutiwat, Sansiri ; Liu, Ming ; Wang, Wei
Author_Institution :
Coll. of Nanoscale Sci. & Eng., Univ. at Albany, Albany, NY, USA
Abstract :
In this paper, a novel CMOS-nano hybrid reconfigurable field-prgrammable gate array architecture (rFPGA) is introduced based on resistive memory (RRAM) devices. Different from the existing crossbar-based CMOS-nano architectures, rFPGA consists of mainly 1T1R RRAM structures that can be fabricated by using a CMOS-compatible process. These devices can efficiently establish FPGA block memories. More importantly, novel RRAM routing switches are developed to replace the CMOS routing switches to achieve significant density enhancement and power reduction. The simulation results demonstrate that 2-D and 3-D rFPGAs provide at least 2× -3× overall improvement in terms of area with 20% lower power consumption, compared with the corresponding CMOS FPGAs.
Keywords :
CMOS memory circuits; field programmable gate arrays; random-access storage; 1T1R RRAM structure; CMOS compatible process; CMOS-nanohybrid Block reconfigurable field-prgrammable gate array architecture; FPGA block memory; RRAM; crossbar-based CMOS-nano architecture; power reduction; resistive memory device; CMOS integrated circuits; Field programmable gate arrays; Junctions; Programming; Random access memory; Routing; Transistors; 3-D integration; CMOS-nano hybrid circuit; field-programmable gate array (FPGA); nanojunction; resistive RAM (RRAM);
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2010.2063444