Spectral gain hole-burning at 1.53 mu m in erbium-doped fiber amplifiers

Author

Desurvire, E. ; Zyskind, J.L. ; Simpson, J.R.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

2

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

246

Lastpage

248

Abstract

Spectral gain hole-burning at lambda /sub 0/=1.53 mu m was observed in an erbium-doped fiber amplifier at temperatures between 4.2 and 77 K. The hole width was found to broaden with temperature for T>or=20 K according to a T/sup 1.73/ law. From the data, the room-temperature homogeneous linewidth associated with the 1.531- mu m transition in the /sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/ laser system was determined to be Delta lambda /sub h/=11.5 nm for aluminosilicate fibers.<>

Keywords

erbium; fibre optics; laser transitions; optical hole burning; solid lasers; spectral line breadth; /sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/ laser system; 1.53 micron; 1.531 micron; 4.2 to 77 K; SiO/sub 2/-GeO/sub 2/-Al/sub 2/O/sub 3/:Er; T/sup 1.73/ law; aluminosilicate fibers; erbium-doped fiber amplifiers; hole width; laser transition; room-temperature homogeneous linewidth; spectral gain hole burning; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Isolators; Laser transitions; Optical fiber communication; Optical fiber polarization; Optical fiber sensors; Optical fibers; Optical pumping; Temperature sensors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.53251

Filename

53251