A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor

Author

Jiaju Ma ; Fossum, Eric R.

Author_Institution

Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA

Volume

3

Issue

2

fYear

2015

fDate

Mar-15

Firstpage

73

Lastpage

77

Abstract

A new photodetector designed for Quanta image sensor application is proposed. The photodetector is a backside-illuminated, buried photodiode with a vertically integrated pump and transfer gate and a distal floating diffusion to reduce parasitic capacitance. The structure features compact layout and high conversion gain. The proposed device is modeled and simulated, and its performance characteristics estimated.

Keywords

CMOS image sensors; photodetectors; photodiodes; Quanta image sensor application; backside illumination; buried photodiode; compact layout; distal floating diffusion; high conversion gain; parasitic capacitance reduction; performance characteristics estimation; photodetector; pump gate jot device; transfer gate; vertically integrated pump; Capacitance; Charge transfer; IEEE Electron Devices Society; Image sensors; Implants; Layout; Logic gates; CMOS image sensor; Quanta Image Sensor; Quanta image sensor (QIS); full well capacity; high conversion gain; jot; pump gate;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2015.2390491

Filename

7006672