Title :
A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor
Author :
Jiaju Ma ; Fossum, Eric R.
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
Abstract :
A new photodetector designed for Quanta image sensor application is proposed. The photodetector is a backside-illuminated, buried photodiode with a vertically integrated pump and transfer gate and a distal floating diffusion to reduce parasitic capacitance. The structure features compact layout and high conversion gain. The proposed device is modeled and simulated, and its performance characteristics estimated.
Keywords :
CMOS image sensors; photodetectors; photodiodes; Quanta image sensor application; backside illumination; buried photodiode; compact layout; distal floating diffusion; high conversion gain; parasitic capacitance reduction; performance characteristics estimation; photodetector; pump gate jot device; transfer gate; vertically integrated pump; Capacitance; Charge transfer; IEEE Electron Devices Society; Image sensors; Implants; Layout; Logic gates; CMOS image sensor; Quanta Image Sensor; Quanta image sensor (QIS); full well capacity; high conversion gain; jot; pump gate;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2390491
