Title :
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
Author :
Sahoo, Kartika Chandra ; Kuo, Chien-I ; Li, Yiming ; Chang, Edward Yi
Abstract :
In this paper, we report the first result of a strained In0.52Ga0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In0.4Ga0.6 As source/drain (S/D) regions. A lattice mismatch of 0.9% between In0.52Ga0.48 As and In0.52Ga0.48 As S/D has resulted in a lateral strain in the In0.52Ga0.48 As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; InGaAs; cutoff frequency; device simulation; frequency 150 GHz; high frequency applications; metamorphic HEMT; series resistance; source-drain region; strained channel high-electron mobility transistor; Computational modeling; Cutoff frequency; HEMTs; Logic gates; Materials; Strain; Transconductance; DC and ac characteristics; Device simulation; HEMT; InGaAs; strained channel;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2062521
