2.5 kV 2000-A monolithic reverse conducting gate turn-off thyristor

A 2.5 kV 2000 A monolithic reverse-conducting gate turn-off thyristor (RC-GTO) has been developed using a precise lifetime control technique, a precise gate etching control technique, and an electrical separation technique between the GTO part and the diode part. It is most important for the RC-GTO to separate electrically the GTO part from the diode part. A very high separation resistance of 100-150 Ω is attained by applying a double diffused profile, and a high turn-off current of 2000 A is achieved by applying the precise lifetime control technique and the precise gate etching control technique. The development of the 2.5 kV 2000 A RC-GTO has been aided by the use of computer simulation and an image-converter camera