DocumentCode
1310620
Title
Microwave noise characterisation of ALLnAs/ GaAsSbIinP DHBTs
Author
Zeng, Y.P. ; Benedickter, Hansruedi ; Wu, Bi-Ru ; Bolognesi, C.R.
Author_Institution
Lab. for Electromagn. Fields & Microwave Electron. (IfH), ETH Zurich, Zurich, Switzerland
Volume
45
Issue
23
fYear
2009
fDate
11/1/2009 12:00:00 AM
Firstpage
1190
Lastpage
1191
Abstract
Reported is the first experimental microwave noise characterisation of 0.9 times 11.5 mum2 emitter AlInAs/GaAsSb/InP double heterojunction bipolar transistors with a `type-I` AlInAs emitter. The devices feature cutoff frequencies of f T = 210 GHz and f MAX = 127 GHz, and achieve a minimum noise figure NF min < 3 dB with an associated gain G A = 12 dB at 10 GHz.
Keywords
III-V semiconductors; aluminium compounds; antimony compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; phosphorus compounds; semiconductor device noise; AlInAs-GaAsSb-InP; cutoff frequency; double heterojunction bipolar transistor; frequency 127 GHz; frequency 210 GHz; microwave noise characterisation; noise figure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.1646
Filename
5325134
Link To Document