Title :
Microwave noise characterisation of ALLnAs/ GaAsSbIinP DHBTs
Author :
Zeng, Y.P. ; Benedickter, Hansruedi ; Wu, Bi-Ru ; Bolognesi, C.R.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron. (IfH), ETH Zurich, Zurich, Switzerland
fDate :
11/1/2009 12:00:00 AM
Abstract :
Reported is the first experimental microwave noise characterisation of 0.9 times 11.5 mum2 emitter AlInAs/GaAsSb/InP double heterojunction bipolar transistors with a `type-I` AlInAs emitter. The devices feature cutoff frequencies of f T = 210 GHz and f MAX = 127 GHz, and achieve a minimum noise figure NF min < 3 dB with an associated gain G A = 12 dB at 10 GHz.
Keywords :
III-V semiconductors; aluminium compounds; antimony compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; phosphorus compounds; semiconductor device noise; AlInAs-GaAsSb-InP; cutoff frequency; double heterojunction bipolar transistor; frequency 127 GHz; frequency 210 GHz; microwave noise characterisation; noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1646
