Title :
Source access impedance model for AIGaN/ GaN HEMTs
Author :
Xu, Yan ; Guo, Youguang ; Wu, Yaowu ; Xu, Ruimin ; Yan, Bin ; Lin, Weisi
Author_Institution :
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China
fDate :
11/1/2009 12:00:00 AM
Abstract :
Thermal noise caused by source parasitic impedance (R s) is one of the most important noise mechanisms in AlGaN/GaN HEMTs. A physical based frequency dependent R s model is proposed. This model has been implemented in the PUCEL model for validation purpose, and the results show that the minimum noise figure (F min) of an AlGaN/GaN HEMT is not linear but nonlinear against frequency.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; thermal noise; AlGaN; GaN; HEMT; PUCEL model; source access impedance model; source parasitic impedance; thermal noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1573
