Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects

Author

Lu, Liqing ; Bryant, Angus ; Hudgins, Jerry L. ; Palmer, Patrick R. ; Santi, Enrico

Author_Institution

Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA

Volume

46

Issue

6

fYear

2010

Firstpage

2556

Lastpage

2567

Abstract

An existing physics-based insulated gate bipolar transistor (IGBT) model, which has been proven accurate for both inductive turn-off and inductive turn-on simulations, is modified to account for planar-gate IGBT 2-D effects at the MOS end of the drift region. The modification is based on a steady-state solution of carrier distribution in the JFET region of the IGBT. The accuracy of this solution is verified through a set of finite element simulations. The improved accuracy of the modified model in terms of on-state forward drop and voltage tail at turn-on is verified through comparison with experimental results.

Keywords

finite element analysis; insulated gate bipolar transistors; junction gate field effect transistors; semiconductor device models; JFET region; MOS side two-dimensional effects; carrier distribution; finite element simulations; insulated gate bipolar transistor; physics-based model; planar-gate IGBT; Boundary conditions; Equations; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Mathematical model; Predictive models; Insulated gate bipolar transistor (IGBT) model; physics-based model; power semiconductor modeling;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.2010.2071190

Filename

5560801