• DocumentCode
    131074
  • Title

    A low hardware cost wear-leveling algorithm for application of smart mobile terminals

  • Author

    Hongfei Zou ; Liyang Pan

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    27-29 June 2014
  • Firstpage
    1067
  • Lastpage
    1071
  • Abstract
    NAND flash memory has become a widely-used data storage media. With the scaling down of the cell size, the limited endurance of flash memory is becoming a critical issue. Wear-leveling is employed to evenly distribute program/erase and extend the reliability and lifetime of flash memory. In this paper, a novel wear-leveling algorithm is proposed based on three ideas: firstly, a Block Status Table instead of block erase cycle is constructed to record the status of blocks with lower SRAM consumption; secondly, the heavily worn blocks are screened to involve in garbage collection and free page allocation during dynamic wear-leveling; thirdly, an adjustable threshold is employed to improve the performance of static wear-leveling. Compared to three other state-of-the-art wear-leveling algorithms, the simulation results show that the proposed algorithm features with well wear-leveling performance and larger maximum writable data for five different applications and can reduce the SRAM consumption by 54-60%.
  • Keywords
    SRAM chips; flash memories; paged storage; NAND flash memory; SRAM consumption reduction; adjustable threshold; block status table; blocks status recording; dynamic wear-leveling; evenly distributed erase; evenly distributed program; flash memory lifetime improvement; flash memory reliability improvement; free page allocation; garbage collection; heavily-worn block screening; low-hardware cost wear-leveling algorithm; maximum writable data; smart mobile terminals; static wear-leveling performance improvement; storage media; Algorithm design and analysis; Dynamic scheduling; Flash memories; Heuristic algorithms; Memory management; Mobile communication; Random access memory; Smart Mobile; flash memory; resource-conservative; storage system; wear leveling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Software Engineering and Service Science (ICSESS), 2014 5th IEEE International Conference on
  • Conference_Location
    Beijing
  • ISSN
    2327-0586
  • Print_ISBN
    978-1-4799-3278-8
  • Type

    conf

  • DOI
    10.1109/ICSESS.2014.6933750
  • Filename
    6933750