Title :
Polarization dependence of a 1.52 mu m InGaAs/InP multiple quantum well waveguide electroabsorption modulator
Author :
Pappert, S.A. ; Orazi, R.J. ; Vu, T.T. ; Lin, S.C. ; Clawson, A.R. ; Yu, P.K.L.
Author_Institution :
US Naval Ocean Syst. Center, San Diego, CA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
A ridge-waveguide In/sub 0.53/Ga/sub 0.47/As/InP multiple-quantum-well (MQW) electroabsorption modulator operating at a wavelength of 1.52 mu m is demonstrated. The modulator exhibits large polarization-dependent electroabsorption behavior which favors the modulation of the TM mode. At a reverse bias of 10 V, the modulator has a 24.5-dB extinction ratio for the TM mode, whereas that for the TE mode is only 11.1 dB. Polarization-dependent saturation of absorption has been observed in this device for incident optical power levels of less than 1 mW.
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; light polarisation; optical modulation; optical waveguides; semiconductor quantum wells; 1 mW; 1.52 micron; 10 V; InGaAs-InP; TE mode; TM mode; TM mode modulation; extinction ratio; incident optical power levels; integrated opto-electronics; multiple quantum well; polarization-dependent electroabsorption; reverse bias; ridge-waveguide; saturable absorption; waveguide electroabsorption modulator; Absorption; Extinction ratio; Indium gallium arsenide; Indium phosphide; Optical devices; Optical modulation; Optical polarization; Optical saturation; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
