DocumentCode :
1310783
Title :
Analysis of Power Switching Losses Accounting Probe Modeling
Author :
Ammous, Kaiçar ; Morel, Hervé ; Ammous, Anis
Author_Institution :
Dept. de Genie Electr., Ecole Nat. d´´Ing. de Sfax (ENIS), Sfax, Tunisia
Volume :
59
Issue :
12
fYear :
2010
Firstpage :
3218
Lastpage :
3226
Abstract :
This paper focuses on the errors affecting the estimation of power switching losses in power semiconductor devices based on integration of the voltage by current product. It is shown that the measured waveforms are not simply delayed by the probes, but some overshoots and distortions are due to the probes, which may not easily be corrected. These effects are the source of errors, particularly in fast transients. This paper shows analyses of simulation and measurements, including probe models.
Keywords :
power measurement; power semiconductor devices; power semiconductor devices; power switching losses; Current measurement; Integrated circuit modeling; Loss measurement; MOSFET circuits; P-i-n diodes; Probes; Semiconductor device measurement; Transient analysis; Distortions; losses; measurement; power; probe modeling;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2010.2047302
Filename :
5560819
Link To Document :
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