DocumentCode :
1310966
Title :
Low-Voltage Electric-Double-Layer TFTs on 
-Covered Paper Substrates
Author :
Dou, Wei ; Jiang, Jie ; Sun, Jia ; Zhou, Bin ; Wan, Qing
Author_Institution :
Key Lab. for Micro-Nano Optoelectron. Devices of the Minist. of Educ., Hunan Univ., Changsha, China
Volume :
32
Issue :
11
fYear :
2011
Firstpage :
1543
Lastpage :
1545
Abstract :
Low-voltage electric-double-layer (EDL) thin-fllm transistors (TFTs) have been fabricated on paper substrates at room temperature. The devices operated in depletion mode, and the resistivity of the Indium-Tin-Oxide (ITO) channel layer is measured to be 24 Ω · cm. An SiO2 film deposited by plasma enhanced chemical-vapor deposition method is used as the buffer layer to improve the smoothness of the paper substrate. TFTs on the SiO2-covered paper substrates show a saturation filed-effect mobility of 14.6 cm2V-1s-1, a subthreshold swing of 100 mV/dec, and a drain-current on/off ratio of 1.5 × 106, which are much better than that of the devices on bare paper substrates. Such EDL TFTs on paper substrates with an SiO2 buffer layer have potential application in portable sensors.
Keywords :
buffer layers; indium compounds; low-power electronics; paper; plasma CVD; silicon compounds; thin film transistors; ITO; SiO2; buffer layer; electric-double-layer TFT; indium-tin-oxide channel layer; low-voltage TFT; paper substrates; plasma enhanced chemical vapor deposition; saturation filed-effect mobility; temperature 293 K to 298 K; thin-fllm transistors; Buffer layers; Capacitance; Indium tin oxide; Logic gates; Substrates; Thin film transistors; Electric double layer (EDL); paper thin-film transistors (TFTs); portable electronics;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2163811
Filename :
6006504
Link To Document :
