DocumentCode :
1311000
Title :
Excellent Selector Characteristics of Nanoscale 
for High-Density Bipolar ReRAM Applications
Author :
Son, Myungwoo ; Lee, Joonmyoung ; Park, Jubong ; Shin, Jungho ; Choi, Godeuni ; Jung, Seungjae ; Lee, Wootae ; Kim, Seonghyun ; Park, Sangsu ; Hwang, Hyunsang
Author_Institution :
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
32
Issue :
11
fYear :
2011
Firstpage :
1579
Lastpage :
1581
Abstract :
We herein present a nanoscale vanadium oxide (VO2) device with excellent selector characteristics such as a high on/off ratio (>; 50), fast switching speed (<; 20 ns), and high current density (>; 106 A/cm2). Owing to extrinsic defects, a large-area device with a 20-nm-thick VO2 layer underwent an electrical short. In contrast, after scaling the device active area (<; 5 × 104 nm2), excellent switching uniformity was obtained. This can be explained by the reduced defects and the metal-insulator transition of the whole nanoscale VO2. By integrating a bipolar resistive random access memory device with the VO2 selection device, a significantly improved readout margin was obtained. The VO2 selection device shows good potential for cross-point bipolar resistive memory applications.
Keywords :
current density; metal-insulator transition; random-access storage; vanadium compounds; VO2; current density; electrical short; excellent selector characteristics; extrinsic defects; high-density bipolar ReRAM; large-area device; metal-insulator transition; nanoscale vanadium oxide device; resistive random access memory; size 20 nm; Hafnium compounds; Heating; Nanoscale devices; Reliability; Resistance; Schottky diodes; Switches; Nanoscale device; resistive random access memory (ReRAM); selection device; vanadium oxide $(hbox{VO}_{2})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2163697
Filename :
6006508
Link To Document :
