DocumentCode :
1311005
Title :
A High-Density MTP Cell With Contact Coupling Gates by Pure CMOS Logic Process
Author :
Haw-Yun Wu ; Cheng-Wei Tsai ; Chiu-Wang Lien ; Chih, Yu-Der ; Chrong Jung Lin
Author_Institution :
Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
32
Issue :
10
fYear :
2011
Firstpage :
1352
Lastpage :
1354
Abstract :
In this letter, we propose a new fully logic-process-compatible multitime programmable (MTP) memory cell for high-density logic nonvolatile memory (NVM) applications. A very small logic NVM MTP cell has been demonstrated on pure 0.18-μm CMOS process and logic design rules without extra masking and process steps. The MTP cell can be efficiently programmed and erased with a novel tiny contact coupling structure. Very small cell size, fast programming speed, and superior reliability characteristic make the new contact coupling gate MTP cell be one of the most promising solutions in advanced logic NVM application.
Keywords :
CMOS logic circuits; integrated memory circuits; random-access storage; CMOS logic; high-density logic nonvolatile memory; logic design; multitime programmable memory cell; size 0.18 mum; CMOS integrated circuits; Computer architecture; Couplings; Logic gates; Microprocessors; Nonvolatile memory; Reliability; Contact coupling; logic nonvolatile memory (NVM); multitime programmable (MTP);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2163612
Filename :
6006509
Link To Document :
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