DocumentCode
1311005
Title
A High-Density MTP Cell With Contact Coupling Gates by Pure CMOS Logic Process
Author
Haw-Yun Wu ; Cheng-Wei Tsai ; Chiu-Wang Lien ; Chih, Yu-Der ; Chrong Jung Lin
Author_Institution
Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
32
Issue
10
fYear
2011
Firstpage
1352
Lastpage
1354
Abstract
In this letter, we propose a new fully logic-process-compatible multitime programmable (MTP) memory cell for high-density logic nonvolatile memory (NVM) applications. A very small logic NVM MTP cell has been demonstrated on pure 0.18-μm CMOS process and logic design rules without extra masking and process steps. The MTP cell can be efficiently programmed and erased with a novel tiny contact coupling structure. Very small cell size, fast programming speed, and superior reliability characteristic make the new contact coupling gate MTP cell be one of the most promising solutions in advanced logic NVM application.
Keywords
CMOS logic circuits; integrated memory circuits; random-access storage; CMOS logic; high-density logic nonvolatile memory; logic design; multitime programmable memory cell; size 0.18 mum; CMOS integrated circuits; Computer architecture; Couplings; Logic gates; Microprocessors; Nonvolatile memory; Reliability; Contact coupling; logic nonvolatile memory (NVM); multitime programmable (MTP);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2163612
Filename
6006509
Link To Document