• DocumentCode
    1311005
  • Title

    A High-Density MTP Cell With Contact Coupling Gates by Pure CMOS Logic Process

  • Author

    Haw-Yun Wu ; Cheng-Wei Tsai ; Chiu-Wang Lien ; Chih, Yu-Der ; Chrong Jung Lin

  • Author_Institution
    Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    32
  • Issue
    10
  • fYear
    2011
  • Firstpage
    1352
  • Lastpage
    1354
  • Abstract
    In this letter, we propose a new fully logic-process-compatible multitime programmable (MTP) memory cell for high-density logic nonvolatile memory (NVM) applications. A very small logic NVM MTP cell has been demonstrated on pure 0.18-μm CMOS process and logic design rules without extra masking and process steps. The MTP cell can be efficiently programmed and erased with a novel tiny contact coupling structure. Very small cell size, fast programming speed, and superior reliability characteristic make the new contact coupling gate MTP cell be one of the most promising solutions in advanced logic NVM application.
  • Keywords
    CMOS logic circuits; integrated memory circuits; random-access storage; CMOS logic; high-density logic nonvolatile memory; logic design; multitime programmable memory cell; size 0.18 mum; CMOS integrated circuits; Computer architecture; Couplings; Logic gates; Microprocessors; Nonvolatile memory; Reliability; Contact coupling; logic nonvolatile memory (NVM); multitime programmable (MTP);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2163612
  • Filename
    6006509