Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

Author

Chen, Bo-Chun ; Chang, Chun-Yen ; Fu, Yi-Keng ; Huang, Kai-Feng ; Lu, Yu-Hsuan ; Su, Yan-Kuin

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

23

Issue

22

fYear

2011

Firstpage

1682

Lastpage

1684

Abstract

In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compared with the sample with unique 9-nm-thick barriers. A numerical study is executed to analyze the hole distributions in the quantum wells. From the simulated results, it is found that the hole injection efficiency can be improved at high injection current. Hence, the effective recombination of electron and hole is also enhanced at high injection current.

Keywords

III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN-GaN; electron recombination; hole distributions; hole injection; hole recombination; injection current; light-emitting diodes; quantum wells; size 5 nm; thin intermediate barriers; Charge carrier processes; Color; Gallium nitride; Light emitting diodes; Power generation; Radiative recombination; Transportation; Efficiency droop; internal quantum efficiency; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2166540

Filename

6006511