Microwave On/Off Ratio Enhancement of GaAs Photoconductive Switches at Nanometer Scale

Author

Tripon-Canseliet, C. ; Faci, S. ; Pagies, A. ; Magnin, V. ; Formont, S. ; Decoster, D. ; Chazelas, J.

Author_Institution

Lab. d´´Electron. et Electromagn., UPMC Univ. Paris 06, Paris, France

Volume

30

Issue

23

fYear

2012

Firstpage

3576

Lastpage

3579

Abstract

This paper reports on performances enhancement of photoconductive switches in term of On/Off ratio and insertion losses. The optimization parameters on which the research has been focused are gap dimensions reduction to nanometer scale. The device characterization results up to a microwave frequency of 40 GHz and under CW illumination at a wavelength of 800 nm are presented. On/Off ratio reveals a value of 13 dB at 20 GHz under 100 mW optical power.

Keywords

III-V semiconductors; gallium arsenide; microwave switches; optimisation; photoconducting switches; semiconductor device models; CW illumination; GaAs; GaAs photoconductive switches; device characterization; frequency 20 GHz; gain 13 dB; gap dimensions reduction; insertion losses; microwave frequency; microwave on-off ratio enhancement; nanometer scale; optical power; optimization parameters; photoconductive switch enhancement; power 100 mW; Electrodes; Microwave communication; Microwave devices; Microwave photonics; Optical switches; Substrates; Microwave sampling; nanotechnology; photoconductive switches;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2012.2223196

Filename

6324379