Title :
Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs
Author :
Xin Sun ; Moroz, Victor ; Damrongplasit, Nattapol ; Changhwan Shin ; Tsu-Jae King Liu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
The impact of systematic and random variations on transistor performance is investigated for the trigate bulk MOSFET, the planar ground-plane bulk MOSFET, and SOI FinFET. The results indicate that the trigate bulk MOSFET design is least sensitive to process-induced variations and offers the best nominal performance, as compared with the planar ground-plane bulk MOSFET and SOI FinFET.
Keywords :
MOSFET; silicon-on-insulator; SOI FinFET; planar ground-plane bulk MOSFET; process-induced variations; trigate bulk MOSFET; variation study; FinFETs; Logic gates; MOSFET circuits; Resource description framework; Stress; Systematics; Fin-shaped FET; metal–oxide–semiconductor field-effect transistor (MOSFET); multigate FET; variability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2161479
